IBM has just unveiled its new process for etching electronic chips in 2 nm, a world first. The firm promises performance almost doubled compared to current processors, or devices with autonomy quadrupled.
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IBM has just pushed the limits of electronics by announcing a process of gravure of unequaled finesse. His new chips, etched in just 2 nm, can contain more transistors, which improves performance.
This breakthrough is based on a nanosheet technology fromIBM, already used in its 5 nm process, as well as a GAA arrangement (Gate All Around) which places the grid (gate) all around the transistors. This allows it to reach a density of 333 million transistors per mm² (MTr / mm²), compared to 91 and 95 MTr / mm² for 7 nm processors at TSMC and Samsung respectively, or 292 MTr / mm² for the brand new 3 nm process at TSMC. Note that the next generation of chips fromIntel etched at 7 nm should still reach 237 MTr / mm², which shows that it is not only the fineness of the etching which determines the density of the transistors.
The IBM overview video (in English, turn on subtitles). © IBM
Electricity consumption divided by four
These new chips would present considerable gains compared to those currently on the market, mostly engraved in 7 nm. For intensive tasks, they would allow 45% more performance. Conversely, for devices whose priority is theautonomy, they allow electricity consumption to be reduced by 75% for the same performance.
Note, however, that this is a simple prototype. IBM does not have its own factories and will therefore have to convince partners, such as Samsung which currently produces IBM’s Power10 processors. We should not expect to see them on the market before 2024 or 2025. These chips could quadruple the autonomy of smartphones, according to IBM, reduce the power consumption of data centers, and improve the performance of computers laptops and self-driving cars. The firm also targetsartificial intelligence, space exploration, 5G and even 6G.
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